JPH0454983B2 - - Google Patents

Info

Publication number
JPH0454983B2
JPH0454983B2 JP57168829A JP16882982A JPH0454983B2 JP H0454983 B2 JPH0454983 B2 JP H0454983B2 JP 57168829 A JP57168829 A JP 57168829A JP 16882982 A JP16882982 A JP 16882982A JP H0454983 B2 JPH0454983 B2 JP H0454983B2
Authority
JP
Japan
Prior art keywords
region
high concentration
type
concentration impurity
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57168829A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5957471A (ja
Inventor
Koichi Kanzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP57168829A priority Critical patent/JPS5957471A/ja
Publication of JPS5957471A publication Critical patent/JPS5957471A/ja
Publication of JPH0454983B2 publication Critical patent/JPH0454983B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65Integrated injection logic

Landscapes

  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
JP57168829A 1982-09-28 1982-09-28 半導体装置 Granted JPS5957471A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57168829A JPS5957471A (ja) 1982-09-28 1982-09-28 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57168829A JPS5957471A (ja) 1982-09-28 1982-09-28 半導体装置

Publications (2)

Publication Number Publication Date
JPS5957471A JPS5957471A (ja) 1984-04-03
JPH0454983B2 true JPH0454983B2 (en]) 1992-09-01

Family

ID=15875286

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57168829A Granted JPS5957471A (ja) 1982-09-28 1982-09-28 半導体装置

Country Status (1)

Country Link
JP (1) JPS5957471A (en])

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3962717A (en) * 1974-10-29 1976-06-08 Fairchild Camera And Instrument Corporation Oxide isolated integrated injection logic with selective guard ring
JPS5341078A (en) * 1976-09-24 1978-04-14 Masaaki Sakuta Parallel filament bulb

Also Published As

Publication number Publication date
JPS5957471A (ja) 1984-04-03

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